SIC Kristal

SiC crystal
Technological capability:
1. 2"-4" SiC wafers, including: N type SiC, semi-insulating 6H-SiC\4H-SiC
2. Surface roughness <0.3nm
3. Microtubules density<10/cm2, stabilized crystal structure (>90%), controlled conduction type (n type or semi-insulating)
4. Self-owned intellectual property right

SiC is an important wide band gap semiconductor material which is considered the representative of third-generation wide band gap semiconductor materials after first-generation (Si, Ge) and second-generation (GaAs, GaP, InP) compound semiconductor materials. The development of Si device performance has been reached the limit. Therefore, the research of wide band gap semiconductor material becomes urgent and important. SiC has attractive properties such as wide band gap, high heat conductivity, high electronic saturated migration rate and has been widely used for fabrication optoelectronic and high frequency high power electronic device.